Parametric results for: JANTXV2N6851 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 1 RADIATION HARDENED 2

6 hits Apply

75.0 mJ 2 171.0 mJ 1 500.0 mJ 2

Min (mJ) - Max (mJ)

6 hits Apply

DRAIN 2 SOURCE 1

6 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 5

6 hits Apply

DS Breakdown Voltage-Min (1)

200 V 6

6 hits Apply

Drain Current-Max (ID) (1)

4 A 6

6 hits Apply

Drain-source On Resistance-Max (3)

800 mΩ 3 830 mΩ 1 1.68 Ω 2

Min (Ω) - Max (Ω)

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

TO-205AF 4 TO-39 1

6 hits Apply

O-MBCY-W3 5 R-CQCC-N15 1

6 hits Apply

e0 4

6 hits Apply

Manufacturer (5)

Harris Semiconductor 1 Infineon Technologies AG 2 Intersil Corporation 1 Microsemi Corporation 1 Semicoa Semiconductors 1

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (2)

15 1 3 5

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 4

6 hits Apply

CERAMIC, METAL-SEALED COFIRED 1 METAL 5

6 hits Apply

RECTANGULAR 1 ROUND 5

6 hits Apply

CHIP CARRIER 1 CYLINDRICAL 5

6 hits Apply

Active 2 Contact Manufacturer 1 Obsolete 3

6 hits Apply

No 1

6 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 6

6 hits Apply

25 W 2

6 hits Apply

25 W 2

6 hits Apply

Surface Mount (2)

NO 5 YES 1

6 hits Apply