| Manufacturer | Description | Price Range | Set Alert | Details |
|---|---|---|---|---|
| Harris Semiconductor | Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | $19.4426 / $121.4666 |
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| International Rectifier | POWER FIELD-EFFECT TRANSISTOR, 4A I(D), 200V, 0.8OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-205AF | $97.1733 / $121.4666 |
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| Vishay Siliconix | POWER FIELD-EFFECT TRANSISTOR, 4A I(D), 200V, 0.8OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-205AF | $109.3199 / $121.4666 |
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| Intersil Corporation | 4A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF |
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| Infineon Technologies AG | Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN |
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| Semicoa Semiconductors | Power Field-Effect Transistor, 4A I(D), 200V, 0.83ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN |
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| Microsemi Corporation | Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, |
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