| Manufacturer | Description | Price Range | Set Alert | Details |
|---|---|---|---|---|
| Samsung Semiconductor | Power Field-Effect Transistor, 3.6A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
|
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| Rochester Electronics LLC | 3.6A, 100V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN |
|
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| Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 3.6A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
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