Part Details for JANTXV2N6851 by Microsemi Corporation
Results Overview of JANTXV2N6851 by Microsemi Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
JANTXV2N6851 Information
JANTXV2N6851 by Microsemi Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for JANTXV2N6851
JANTXV2N6851 CAD Models
JANTXV2N6851 Part Data Attributes
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JANTXV2N6851
Microsemi Corporation
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Datasheet
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JANTXV2N6851
Microsemi Corporation
Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39,
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Package Description | CYLINDRICAL, O-MBCY-W3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 0.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-39 | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | P-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Element Material | SILICON |
Alternate Parts for JANTXV2N6851
This table gives cross-reference parts and alternative options found for JANTXV2N6851. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV2N6851, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| JANTXV2N6851 | Intersil Corporation | Check for Price | 4A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF | JANTXV2N6851 vs JANTXV2N6851 |
| IRFF9230 | Rochester Electronics LLC | Check for Price | 4A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF | JANTXV2N6851 vs IRFF9230 |
| 2N6851TXV | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | JANTXV2N6851 vs 2N6851TXV |
| JANTXV2N6851 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 4A I(D), 200V, 1.68ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | JANTXV2N6851 vs JANTXV2N6851 |
| JANTXV2N6851 | Semicoa Semiconductors | Check for Price | Power Field-Effect Transistor, 4A I(D), 200V, 0.83ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | JANTXV2N6851 vs JANTXV2N6851 |
| 2N6851R1 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 4A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN | JANTXV2N6851 vs 2N6851R1 |
| JANTX2N6851 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 4A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | JANTXV2N6851 vs JANTX2N6851 |