Part Details for IRF730PBF by Vishay Siliconix
Results Overview of IRF730PBF by Vishay Siliconix
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF730PBF Information
IRF730PBF by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF730PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF730PBF-ND
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DigiKey | MOSFET N-CH 400V 5.5A TO220AB Min Qty: 1 Lead time: 15 Weeks Container: Tube |
21565 In Stock |
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$0.7037 / $1.0900 | Buy Now |
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DISTI #
70459402
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RS | N-Chan 400V 5.5 Amp Min Qty: 1000 Package Multiple: 1 Container: Bulk | 0 |
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$1.1100 / $1.3100 | RFQ |
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New Advantage Corporation | Single N-Channel 400 V 1 Ohms Flange Mount Power Mosfet - TO-220-3 RoHS: Compliant Min Qty: 1 Package Multiple: 50 | 22400 |
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$0.8846 / $0.9583 | Buy Now |
Part Details for IRF730PBF
IRF730PBF CAD Models
IRF730PBF Part Data Attributes
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IRF730PBF
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
IRF730PBF
Vishay Siliconix
Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | TO-220AB | |
| Package Description | ROHS COMPLIANT, TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 290 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 5.5 A | |
| Drain-source On Resistance-Max | 1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 22 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF730PBF
This table gives cross-reference parts and alternative options found for IRF730PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF730PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF730 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IRF730PBF vs IRF730 |
| IRF730 | Intersil Corporation | Check for Price | 5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | IRF730PBF vs IRF730 |
| BUZ60 | Intersil Corporation | Check for Price | TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,5.5A I(D),TO-220AB | IRF730PBF vs BUZ60 |
| MTP5N35 | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 5A I(D), 350V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF730PBF vs MTP5N35 |
| MTP5N40E | Semiconductor Technology Inc | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | IRF730PBF vs MTP5N40E |
| IRF730 | NXP Semiconductors | Check for Price | 7.2A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN | IRF730PBF vs IRF730 |
IRF730PBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRF730PBF is -55°C to 175°C.
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To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 4V, and the drain-source voltage (Vds) should be between 10V and 200V, depending on the application.
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The recommended gate resistor value for the IRF730PBF is typically between 1kΩ and 10kΩ, depending on the specific application and switching frequency.
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To protect the IRF730PBF from overvoltage and overcurrent, use a voltage regulator or a voltage clamp to limit the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent overcurrent.
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The maximum allowable power dissipation for the IRF730PBF is 125W, but this can be affected by the operating temperature, PCB design, and thermal management.