| NTE Electronics Inc |
Power Mosfet N-Channel 400V Id=5.5A To-220 Case Fast Switching |Nte Electronics IRF730 |
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| Harris Semiconductor |
Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
$0.9010 / $1.8125
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| Vishay Siliconix |
Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
$0.9000 / $5.0600
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| onsemi |
IRF730 |
$0.9010 / $1.8125
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| International Rectifier |
Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
$0.3920 / $1.6055
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| STMicroelectronics |
5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN |
$0.6300 / $4.0000
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| New Jersey Semiconductor Products Inc |
Trans MOSFET N-CH 400V 5.5A 3-Pin(3+Tab) TO-220AB |
$2.4360 / $6.9600
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| Samsung Semiconductor |
Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
$0.3500 / $1.4000
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| Motorola Semiconductor Products |
Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
$0.3920 / $1.2600
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| Southern Electronics |
TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,5.5A I(D),TO-220AB |
$0.5040 / $0.8400
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| Vishay Intertechnologies |
Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN |
$1.9800 / $3.9600
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| General Electric Company |
TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,5.5A I(D),TO-220AB |
$1.2844 / $1.6055
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| Texas Instruments |
IRF730 |
$1.2600
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| Infineon Technologies AG |
MOSFET 2N-CH 20V 5.2A 8-SOIC |
$0.1143 / $0.1475
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| Freescale Semiconductor |
TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,5.5A I(D),TO-220AB |
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| Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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| General Electric Solid State |
Transistor |
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| Motorola Mobility LLC |
5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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| Rochester Electronics LLC |
5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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| Advanced Microelectronic Products Inc |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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| Micro Electronics Ltd |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
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| Advanced Power Electronics Corp |
TRANSISTOR 5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power |
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| Jiangsu Changjiang Electronics Technology Co Ltd |
Transistor |
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| Philips Semiconductors |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
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| NXP Semiconductors |
7.2A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN |
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| Thomson Consumer Electronics |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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| TT Electronics Resistors |
Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
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| Microsemi Corporation |
Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220 |
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| Micro Electronics Corporation |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
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| Inchange Semiconductor Company Ltd |
Transistor |
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| National Semiconductor Corporation |
TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,5.5A I(D),TO-220AB |
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| TT Electronics Power and Hybrid / Semelab Limited |
5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN |
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| FCI Semiconductor |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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| Intersil Corporation |
5.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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