| STMicroelectronics |
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$2.1900 / $3.2850
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| Samsung Electro-Mechanics |
POWER FIELD-EFFECT TRANSISTOR, 4A I(D), 60V, 0.6OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB |
$1.7160 / $3.9600
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| RCA |
POWER FIELD-EFFECT TRANSISTOR, 4A I(D), 60V, 0.6OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB |
$3.0000 / $4.0000
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| Harris Semiconductor |
Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
$2.6400 / $3.9600
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| Honest Han |
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| FCI Semiconductor |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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| Microchip Technology Inc |
TRANSISTOR,MOSFET,N-CHANNEL,80V V(BR)DSS,5.6A I(D),TO-220AB |
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| Thomson Consumer Electronics |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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| Motorola Mobility LLC |
4A, 60V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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| General Electric Solid State |
Transistor |
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| Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
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| Texas Instruments |
IRF511 |
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| National Semiconductor Corporation |
TRANSISTOR,MOSFET,N-CHANNEL,80V V(BR)DSS,5.6A I(D),TO-220AB |
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| Advanced Microelectronic Products Inc |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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| Freescale Semiconductor |
TRANSISTOR,MOSFET,N-CHANNEL,80V V(BR)DSS,5.6A I(D),TO-220AB |
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| International Rectifier |
Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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| Supertex Inc |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
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| Rochester Electronics LLC |
5.6A, 80V, 0.54ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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| Intersil Corporation |
5.6A, 80V, 0.54ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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| Motorola Semiconductor Products |
Power Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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| Samsung Semiconductor |
Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN |
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| New Jersey Semiconductor Products Inc |
Trans MOSFET N-CH 60V 4A 3-Pin(3+Tab) TO-220 |
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| Vishay Siliconix |
Power Field-Effect Transistor, 5.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET, |
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