Part Details for IRF511 by International Rectifier
Results Overview of IRF511 by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (5 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF511 Information
IRF511 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for IRF511
IRF511 CAD Models
IRF511 Part Data Attributes
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IRF511
International Rectifier
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Datasheet
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IRF511
International Rectifier
Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 5.6 A | |
| Drain-source On Resistance-Max | 0.54 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 43 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF511
This table gives cross-reference parts and alternative options found for IRF511. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF511, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRF513 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | IRF511 vs IRF513 |
| IRF511 | National Semiconductor Corporation | Check for Price | TRANSISTOR,MOSFET,N-CHANNEL,80V V(BR)DSS,5.6A I(D),TO-220AB | IRF511 vs IRF511 |
| IRF513 | National Semiconductor Corporation | Check for Price | TRANSISTOR,MOSFET,N-CHANNEL,80V V(BR)DSS,4.9A I(D),TO-220AB | IRF511 vs IRF513 |
| IRF511 | Texas Instruments | Check for Price | IRF511 | IRF511 vs IRF511 |
| IRF513 | Texas Instruments | Check for Price | IRF513 | IRF511 vs IRF513 |
IRF511 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF511 is not explicitly stated in the datasheet, but it can be determined by consulting the International Rectifier application note AN-936, which provides SOA curves for the device.
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To ensure the IRF511 is fully turned on and off, the gate-source voltage (Vgs) should be driven to the recommended levels: Vgs = 10V for turn-on and Vgs = -5V for turn-off. Additionally, the gate drive circuit should be designed to provide a fast rise and fall time to minimize switching losses.
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The maximum junction temperature (Tj) for the IRF511 is 150°C, but it's recommended to operate the device at a lower temperature (typically below 125°C) to ensure reliability and minimize thermal stress.
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Yes, the IRF511 can be used in high-frequency switching applications, but it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the gate drive circuit is designed to minimize switching losses and ringing.
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To protect the IRF511 from overvoltage and overcurrent, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device, and to implement overcurrent protection using a sense resistor and a comparator or a dedicated overcurrent protection IC.