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Transistors / Power Field-Effect Transistors / IRF511
Datasheets
IRF511 by:

Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Details for IRF511 by Harris Semiconductor

Results Overview of IRF511 by Harris Semiconductor

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IRF511 Information

IRF511 by Harris Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRF511

Part # Distributor Description Stock Price Buy
Quest Components POWER FIELD-EFFECT TRANSISTOR, 4A I(D), 60V, 0.6OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB 4
  • 1 $3.9600
  • 4 $2.6400
$2.6400 / $3.9600 Buy Now

Part Details for IRF511

IRF511 CAD Models

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IRF511 Part Data Attributes

Parametric Data
IRF511 Harris Semiconductor
Buy Now Datasheet
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IRF511 Harris Semiconductor Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer HARRIS SEMICONDUCTOR
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 5.6 A
Drain-source On Resistance-Max 0.54 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 43 W
Power Dissipation-Max (Abs) 43 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 42 ns
Turn-on Time-Max (ton) 47 ns

Alternate Parts for IRF511

This table gives cross-reference parts and alternative options found for IRF511. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF511, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF513 Harris Semiconductor Check for Price Power Field-Effect Transistor, 4.9A I(D), 80V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF511 vs IRF513
IRF513 Motorola Semiconductor Products Check for Price Power Field-Effect Transistor, 3.5A I(D), 60V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF511 vs IRF513
IRF511-009 International Rectifier Check for Price Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IRF511 vs IRF511-009
IRF513-006 International Rectifier Check for Price Power Field-Effect Transistor, 4.9A I(D), 80V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IRF511 vs IRF513-006
IRF511-006 International Rectifier Check for Price Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IRF511 vs IRF511-006
MTP4N08 Motorola Semiconductor Products Check for Price Power Field-Effect Transistor, 4A I(D), 80V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF511 vs MTP4N08
IRF511-010 International Rectifier Check for Price Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IRF511 vs IRF511-010
Part Number Manufacturer Composite Price Description Compare
IRF513-009 International Rectifier Check for Price Power Field-Effect Transistor, 4.9A I(D), 80V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IRF511 vs IRF513-009
IRF511-001 International Rectifier Check for Price Power Field-Effect Transistor, 5.6A I(D), 80V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IRF511 vs IRF511-001
IRF513-010 International Rectifier Check for Price Power Field-Effect Transistor, 4.9A I(D), 80V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IRF511 vs IRF513-010
IRF512 Motorola Mobility LLC Check for Price 3.5A, 100V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB IRF511 vs IRF512
AP80T10GP-HF Advanced Power Electronics Corp Check for Price TRANSISTOR 80 A, 100 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, TO-220, 3 PIN, FET General Purpose Power IRF511 vs AP80T10GP-HF
IRF540N Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 33A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB IRF511 vs IRF540N
SUM110N08-07-E3 Vishay Siliconix Check for Price Power Field-Effect Transistor, 110A I(D), 75V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN IRF511 vs SUM110N08-07-E3
SUM90N08-4M8P-E3 Vishay Siliconix Check for Price TRANSISTOR 90 A, 75 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, 3 PIN, FET General Purpose Power IRF511 vs SUM90N08-4M8P-E3
IRF540N Motorola Mobility LLC Check for Price 28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB IRF511 vs IRF540N
IRF512-010 International Rectifier Check for Price Power Field-Effect Transistor, 4.9A I(D), 100V, 0.74ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET IRF511 vs IRF512-010

IRF511 Related Parts

IRF511 Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the IRF511 is not explicitly stated in the datasheet, but it can be estimated based on the device's voltage and current ratings. As a general rule, it's recommended to operate the device within the boundaries of the SOA curve provided in the datasheet to ensure reliable operation.

  • To handle high voltage spikes generated by the IRF511 during switching, it's recommended to use a snubber circuit or a voltage clamp to limit the voltage overshoot. Additionally, ensuring proper PCB layout and using a suitable gate driver can also help minimize voltage spikes.

  • The recommended gate drive voltage for the IRF511 is typically between 10V to 15V, depending on the specific application and switching frequency. However, it's essential to ensure that the gate drive voltage is within the recommended range to avoid device damage or malfunction.

  • While the IRF511 is suitable for high-frequency switching applications, its performance may degrade at very high frequencies (above 100 kHz). It's essential to evaluate the device's performance and ensure that it meets the requirements of your specific application.

  • To ensure proper thermal management of the IRF511, it's essential to provide adequate heat sinking, such as a heat sink or thermal pad, and ensure good thermal conductivity between the device and the heat sink. Additionally, operating the device within its recommended temperature range and avoiding overheating can help prevent thermal-related issues.

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