| Manufacturer | Description | Price Range | Set Alert | Details |
|---|---|---|---|---|
| Harris Semiconductor | Power Field-Effect Transistor, 5.8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | $0.3150 / $0.6351 |
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| Siemens | Power Field-Effect Transistor, 5.8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | $0.4406 / $1.7625 |
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| Infineon Technologies AG | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | $0.3701 / $1.0575 |
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| Honest Han | MOSFET N-CH 200V 5.5A TO220-3 |
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| Intersil Corporation | 5.8A, 200V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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| North American Philips Discrete Products Div | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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| Rochester Electronics LLC | 5.8A, 200V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
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| Comset Semiconductor | Transistor |
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| Thomson Consumer Electronics | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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