Part Details for BUZ73A by Comset Semiconductor
Results Overview of BUZ73A by Comset Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (8 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BUZ73A Information
BUZ73A by Comset Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for BUZ73A
BUZ73A CAD Models
BUZ73A Part Data Attributes
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BUZ73A
Comset Semiconductor
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Datasheet
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BUZ73A
Comset Semiconductor
Transistor
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| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | COMSET SEMICONDUCTORS | |
| Package Description | TO-220, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 5.5 A | |
| Drain-source On Resistance-Max | 0.6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 70 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 40 W | |
| Pulsed Drain Current-Max (IDM) | 22 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 115 ns | |
| Turn-on Time-Max (ton) | 75 ns |
Alternate Parts for BUZ73A
This table gives cross-reference parts and alternative options found for BUZ73A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ73A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRF623-001 | International Rectifier | Check for Price | Power Field-Effect Transistor, 4.3A I(D), 150V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | BUZ73A vs IRF623-001 |
| IRF621 | FCI Semiconductor | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | BUZ73A vs IRF621 |
| IRF622 | National Semiconductor Corporation | Check for Price | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,4A I(D),TO-220AB | BUZ73A vs IRF622 |
| BUZ73A | Thomson Consumer Electronics | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | BUZ73A vs BUZ73A |
| MTP5N20 | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 5A I(D), 200V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | BUZ73A vs MTP5N20 |
| IRF623 | Advanced Microelectronic Products Inc | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | BUZ73A vs IRF623 |
| IRF621 | Advanced Microelectronic Products Inc | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | BUZ73A vs IRF621 |
| IRF622 | Texas Instruments | Check for Price | TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,4A I(D),TO-220AB | BUZ73A vs IRF622 |
BUZ73A Frequently Asked Questions (FAQ)
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The SOA for the BUZ73A is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance, maximum junction temperature, and voltage ratings. As a general guideline, it's recommended to operate the device within the boundaries of Vds = 30V, Id = 10A, and Pd = 50W to ensure safe operation.
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To ensure linear operation, the BUZ73A should be biased in the saturation region. This can be achieved by setting the gate-source voltage (Vgs) between 2V to 4V, and the drain-source voltage (Vds) between 5V to 20V, depending on the specific application requirements. Additionally, the device should be operated within the recommended temperature range to maintain its linearity.
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For optimal performance and thermal management, it's recommended to use a PCB layout with a large copper area for heat dissipation, and to place the device on a thermal pad or heat sink. The device's thermal resistance can be reduced by using a thermal interface material (TIM) and ensuring good thermal contact between the device and the heat sink. A minimum of 1 oz copper thickness and a 2-layer PCB is recommended.
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While the BUZ73A is primarily designed for linear applications, it can be used in high-frequency switching applications up to 100 kHz. However, the device's switching performance may be limited by its internal capacitances and parasitic inductances. To minimize these effects, it's recommended to use a gate driver with a high current capability and a low impedance output, and to optimize the PCB layout for high-frequency operation.
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To protect the BUZ73A from ESD, it's recommended to handle the device with anti-static precautions, such as using an anti-static wrist strap or mat. The device should be stored in an anti-static package, and the PCB should be designed with ESD protection in mind, including the use of ESD protection diodes and resistors.