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N Channel Mosfet, Channel Type:N Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:3.9A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:850Mv, Power Dissipation:750Mw Rohs Compliant: Yes |Vishay SI2312BDS-T1-E3RoHS:
Compliant
Min Qty:1Package Multiple:1Date Code:1Container:Cut TapeSI2312BDS-T1-E3 Part Details
Mosfet, N-Ch, 20V, 3.9A, Sot-23-3, Transistor Polarity:N Channel, Continuous Drain Current Id:3.9A, Drain Source Voltage Vds:20V, On Resistance Rds(On):0.025Ohm, Rds(On) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:850Mv, Power Rohs Compliant: Yes |Vishay SI2312BDS-T1-E3RoHS:
Compliant
Min Qty:1Package Multiple:1Date Code:1Container:Cut TapeSI2312BDS-T1-E3 Part Details
Power MOSFET, N Channel, 20 V, 3.9 A, 31 mOhm, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: SI2312BDS-T1-E3)RoHS:
Compliant
Min Qty:3000Package Multiple:3000Lead time:111 Weeks, 0 DaysContainer:ReelSI2312BDS-T1-E3 Part Details
Power MOSFET, N Channel, 20 V, 3.9 A, 31 mOhm, SOT-23, 3 Pins, Surface Mount - Product that comes on tape, but is not reeled (Alt: 51K6950)RoHS:
Compliant
Min Qty:1Package Multiple:1Lead time:111 Weeks, 0 DaysContainer:Ammo PackSI2312BDS-T1-E3 Part Details
Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236ABRoHS:
Compliant
Min Qty:1Package Multiple:1SI2312BDS-T1-E3 Part Details
Power MOSFET N Channel 20 V 39 A 31 mOhm SOT23 3 Pins Surface Mount (Alt: SI2312BDS-T1-E3)RoHS:
Compliant
Min Qty:3000Package Multiple:3000Lead time:143 Weeks, 0 DaysSI2312BDS-T1-E3 Part Details