Part Details for SI2312BDS-T1-E3 by Vishay Siliconix
Results Overview of SI2312BDS-T1-E3 by Vishay Siliconix
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
SI2312BDS-T1-E3 Information
SI2312BDS-T1-E3 by Vishay Siliconix is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| DP83630SQX/NOPB | Texas Instruments | IEEE 1588 precision time protocol PHYTER™ Ethernet physical layer transceiver 48-WQFN -40 to 85 | |
| DP83620SQE/NOPB | Texas Instruments | Industrial temperature, single port 10/100 Mbps Ethernet PHY transceiver with fiber support 48-WQFN -40 to 85 | |
| DS100BR111ASQE/NOPB | Texas Instruments | DS100BR111A Ultra Low Power 10.3 Gbps 2-Channel Repeater with Input Equalization 24-WQFN -40 to 85 |
Price & Stock for SI2312BDS-T1-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI2312BDS-T1-E3CT-ND
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DigiKey | MOSFET N-CH 20V 3.9A SOT23-3 Min Qty: 1 Lead time: 15 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
15852 In Stock |
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$0.1593 / $0.8300 | Buy Now |
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DISTI #
70026195
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RS | N-CHANNEL 20-V (D-S) MOSFET Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
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$0.6000 | RFQ |
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Quest Components | TRANSISTOR,MOSFET,N-CHANNEL,20V V(BR)DSS,3.9A I(D),SOT-23 | 1079 |
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$0.1523 / $0.3264 | Buy Now |
Part Details for SI2312BDS-T1-E3
SI2312BDS-T1-E3 CAD Models
SI2312BDS-T1-E3 Part Data Attributes
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SI2312BDS-T1-E3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI2312BDS-T1-E3
Vishay Siliconix
TRANSISTOR 3900 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | SOT-23 | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 8.45 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 3.9 A | |
| Drain-source On Resistance-Max | 0.031 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-236 | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.75 W | |
| Pulsed Drain Current-Max (IDM) | 15 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | IEC-61249-2-21 | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 70 ns | |
| Turn-on Time-Max (ton) | 60 ns |
Alternate Parts for SI2312BDS-T1-E3
This table gives cross-reference parts and alternative options found for SI2312BDS-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2312BDS-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| SI2312DS | Vishay Siliconix | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | SI2312BDS-T1-E3 vs SI2312DS |
| SI2312BDS-T1-GE3 | Vishay Intertechnologies | $0.3026 | Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN | SI2312BDS-T1-E3 vs SI2312BDS-T1-GE3 |
| SI2312BDS-T1-E3 | Vishay Intertechnologies | $0.1961 | Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN | SI2312BDS-T1-E3 vs SI2312BDS-T1-E3 |
| DMG3414U-7 | Diodes Incorporated | $0.1287 | Small Signal Field-Effect Transistor, 4.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | SI2312BDS-T1-E3 vs DMG3414U-7 |
| SI2312DS-T1 | Vishay Siliconix | Check for Price | Small Signal Field-Effect Transistor, 3.77A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN | SI2312BDS-T1-E3 vs SI2312DS-T1 |
| SSM3K345R | Toshiba America Electronic Components | Check for Price | Small Signal Field-Effect Transistor | SI2312BDS-T1-E3 vs SSM3K345R |
SI2312BDS-T1-E3 Frequently Asked Questions (FAQ)
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The recommended PCB footprint for the SI2312BDS-T1-E3 is a 6-pin SOT23 package with a 2.9mm x 1.6mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.
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To ensure reliable operation in high-temperature environments, it is recommended to derate the device's power dissipation according to the thermal derating curve provided in the datasheet. Additionally, ensure good thermal conduction between the device and the PCB, and consider using a heat sink if necessary.
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The maximum allowed voltage on the enable pin (EN) of the SI2312BDS-T1-E3 is 6V. Exceeding this voltage may damage the device.
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Yes, the SI2312BDS-T1-E3 can be used in switching regulator applications. However, ensure that the device is operated within its recommended operating conditions and that the switching frequency is within the device's specified range.
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The typical turn-on and turn-off time for the SI2312BDS-T1-E3 is around 10-20ns. However, this may vary depending on the specific application and operating conditions.