Parametric results for: tp2535n3 under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 12 LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE 2 LOW THRESHOLD 15

29 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 29

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DS Breakdown Voltage-Min (1)

350 V 29

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Drain Current-Max (ID) (2)

86 mA 14 300 mA 15

Min (A) - Max (A)

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Drain-source On Resistance-Max (1)

30 Ω 29

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METAL-OXIDE SEMICONDUCTOR 29

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25 pF 29

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TO-92 29

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O-PBCY-T3 27 O-PBCY-W3 2

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e0 17 e3 2

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Manufacturer (2)

Microchip Technology Inc 6 Supertex Inc 23

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Number of Elements (1)

1 29

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Number of Terminals (1)

3 29

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ENHANCEMENT MODE 29

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150.0 °C 29

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-55.0 °C 12

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PLASTIC/EPOXY 29

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ROUND 29

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CYLINDRICAL 29

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Active 6 Obsolete 17 Transferred 6

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No 1 Yes 1

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Polarity/Channel Type (1)

P-CHANNEL 29

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740 mW 12 1 W 17

Min (W) - Max (W)

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740 mW 12 1 W 1

Min (W) - Max (W)

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Surface Mount (1)

NO 29

29 hits Apply