Parametric results for: sub65p06-20 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Surface Mount

DRAIN 2

3 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 2

3 hits Apply

DS Breakdown Voltage-Min (1)

60 V 3

3 hits Apply

Drain Current-Max (ID) (1)

65 A 3

3 hits Apply

Drain-source On Resistance-Max (2)

2 mΩ 1 20 mΩ 2

Min (Ω) - Max (Ω)

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

TO-263AB 3

3 hits Apply

R-PSSO-G2 3

3 hits Apply

e0 1 e3 1

3 hits Apply

Manufacturer (2)

Temic Semiconductors 1 Vishay Siliconix 2

3 hits Apply

1 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

2 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

175.0 °C 2

3 hits Apply

-55.0 °C 2

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE 3

3 hits Apply

Obsolete 2 Transferred 1

3 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 3

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply