Parametric results for: stp80nf55-06 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

650.0 mJ 1 1300.0 mJ 2

Min (mJ) - Max (mJ)

3 hits Apply

DRAIN 1 ISOLATED 1

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

55 V 3

3 hits Apply

Drain Current-Max (ID) (2)

60 A 1 80 A 2

Min (A) - Max (A)

3 hits Apply

Drain-source On Resistance-Max (1)

6.5 mΩ 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

TO-220AB 2 TO-262AA 1

3 hits Apply

R-PSFM-T3 2 R-PSIP-T3 1

3 hits Apply

e3 2

3 hits Apply

Manufacturer (1)

STMicroelectronics 3

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

175.0 °C 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

FLANGE MOUNT 2 IN-LINE 1

3 hits Apply

Active 1 Obsolete 2

3 hits Apply

NOT SPECIFIED 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

50 W 1 210 W 1

Min (W) - Max (W)

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply