Parametric results for: sq2325es-t1_ge3 under Small Signal Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

1.12 mJ 3

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

150 V 3

3 hits Apply

Drain Current-Max (ID) (1)

840 mA 3

3 hits Apply

Drain-source On Resistance-Max (1)

1.77 Ω 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

22 pF 3

3 hits Apply

TO-236 3

3 hits Apply

R-PDSO-G3 3

3 hits Apply

Manufacturer (2)

Vishay Intertechnologies 2 Vishay Siliconix 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

175.0 °C 3

3 hits Apply

-55.0 °C 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE 3

3 hits Apply

Active 3

3 hits Apply

NOT SPECIFIED 3

3 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 3

3 hits Apply

3 W 3

3 hits Apply

Surface Mount (1)

YES 3

3 hits Apply