Parametric results for: rfm25n06 under Power Field-Effect Transistors

All Filters Configuration Drain Current-Max (ID) FET Technology JESD-609 Code Manufacturer Number of Elements Operating Mode Operating Temperature-Max Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE 3

4 hits Apply

Drain Current-Max (ID) (1)

25 A 3

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

4 hits Apply

e0 3

4 hits Apply

Manufacturer (4)

General Electric Solid State 1 Harris Semiconductor 1 Intersil Corporation 1 Thomson Consumer Electronics 1

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

ENHANCEMENT MODE 3

4 hits Apply

150.0 °C 3

4 hits Apply

Obsolete 3 Transferred 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

4 hits Apply

100 W 3

4 hits Apply

Surface Mount (1)

NO 3

4 hits Apply