Parametric results for: pmzb670upe under Small Signal Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 3

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

4 hits Apply

DS Breakdown Voltage-Min (1)

20 V 3

4 hits Apply

Drain Current-Max (ID) (1)

680 mA 3

4 hits Apply

Drain-source On Resistance-Max (1)

850 mΩ 3

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

4 hits Apply

R-PBCC-N3 3

4 hits Apply

e3 4

4 hits Apply

Manufacturer (2)

Nexperia 2 NXP Semiconductors 2

4 hits Apply

1 4

4 hits Apply

Number of Elements (1)

1 3

4 hits Apply

Number of Terminals (1)

3 3

4 hits Apply

ENHANCEMENT MODE 3

4 hits Apply

150.0 °C 1

4 hits Apply

PLASTIC/EPOXY 3

4 hits Apply

RECTANGULAR 3

4 hits Apply

CHIP CARRIER 3

4 hits Apply

Not Recommended 2 Transferred 2

4 hits Apply

260 3

4 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 3

4 hits Apply

2.7 W 1

4 hits Apply

Surface Mount (1)

YES 3

4 hits Apply