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NAND512R3A2CZA6F
Micron Technology Inc
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Check for Price Buy | Yes | Obsolete | 536.8709 Mbit | 8 | 16K | 64MX8 | 1.8 V | 45 ns | FLASH | YES | NO | 4K | 64000000 | 67.1089 M | 512 words | PARALLEL | YES | 50 µA | 15 µA | CMOS | INDUSTRIAL | NO | SLC NAND TYPE | R-PBGA-B64 | Not Qualified | 85 °C | -40 °C | 64 | PLASTIC/EPOXY | FBGA | BGA64,10X12,32 | RECTANGULAR | GRID ARRAY, FINE PITCH | YES | BALL | 800 µm | BOTTOM | MICRON TECHNOLOGY INC | FBGA, BGA64,10X12,32 | compliant | EAR99 | 8542.32.00.51 | |||||||||||||||
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NAND512R3A2CZA6F
Numonyx Memory Solutions
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Check for Price Buy | Yes | Obsolete | 536.8709 Mbit | 8 | 16K | 64MX8 | 1.8 V | 15 µs | FLASH | YES | NO | 1 | 4K | 64000000 | 67.1089 M | ASYNCHRONOUS | 512 words | PARALLEL | 1.8 V | YES | 50 µA | 15 µA | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | NO | SLC NAND TYPE | R-PBGA-B63 | Not Qualified | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 63 | PLASTIC/EPOXY | TFBGA | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.05 mm | 11 mm | 9 mm | NUMONYX | TFBGA, BGA63,10X12,32 | unknown | EAR99 | 8542.32.00.51 | BGA | 63 | |||
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NAND512R3A2CZA6F
STMicroelectronics
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Check for Price Buy | Yes | Transferred | 536.8709 Mbit | 8 | 16K | 64MX8 | 1.8 V | 15 µs | FLASH | YES | NO | 1 | 4K | 64000000 | 67.1089 M | ASYNCHRONOUS | 512 words | PARALLEL | 1.8 V | YES | 50 µA | 15 µA | 1.95 V | 1.7 V | CMOS | INDUSTRIAL | NO | SLC NAND TYPE | R-PBGA-B63 | Not Qualified | 85 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | 63 | PLASTIC/EPOXY | TFBGA | BGA63,10X12,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.05 mm | 11 mm | 9 mm | STMICROELECTRONICS | TFBGA, BGA63,10X12,32 | compliant | EAR99 | 8542.32.00.51 | BGA | 63 | STMicroelectronics |