Findchips: Parametric Search Results for nand256r3a2bza6e


Select Parts		Part Number

		NAND256R3A2BZA6E Numonyx Memory Solutions
		NAND256R3A2BZA6E STMicroelectronics

			Most Relevant						Technical																				Compliance		Operating Conditions				Physical										Dimensions			Other
Composite Price	Rohs Code	Part Life Cycle Code	Memory Density	Memory Width	Sector Size	Organization	Supply Voltage-Nom (Vsup)	Access Time-Max	Memory IC Type	Command User Interface	Data Polling	Number of Functions	Number of Sectors/Size	Number of Words Code	Number of Words	Operating Mode	Page Size	Parallel/Serial	Programming Voltage	Ready/Busy	Standby Current-Max	Supply Current-Max	Supply Voltage-Max (Vsup)	Supply Voltage-Min (Vsup)	Technology	Temperature Grade	Toggle Bit	Type	JESD-30 Code	Qualification Status	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Number of Terminals	Package Body Material	Package Code	Package Equivalence Code	Package Shape	Package Style	Surface Mount	Terminal Form	Terminal Pitch	Terminal Position	Seated Height-Max	Length	Width	Ihs Manufacturer	Part Package Code	Package Description	Pin Count	Reach Compliance Code	ECCN Code	HTS Code

Check for Price Buy

Yes

Obsolete

268.4355 Mbit

32MX8

1.8 V

12 µs

FLASH

32000000

33.5544 M

ASYNCHRONOUS

PARALLEL

1.8 V

1.95 V

1.7 V

CMOS

INDUSTRIAL

SLC NAND TYPE

R-PBGA-B55

Not Qualified

85 °C

-40 °C

NOT SPECIFIED

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.05 mm

10 mm

8 mm

NUMONYX

BGA

8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-55

compliant

EAR99

8542.32.00.51

Check for Price Buy

Yes

Transferred

268.4355 Mbit

16K

32MX8

1.8 V

12 µs

FLASH

YES

32000000

33.5544 M

ASYNCHRONOUS

512 words

PARALLEL

1.8 V

YES

50 µA

15 µA

1.95 V

1.7 V

CMOS

INDUSTRIAL

SLC NAND TYPE

R-PBGA-B55

Not Qualified

85 °C

-40 °C

260

NOT SPECIFIED

PLASTIC/EPOXY

TFBGA

BGA55,8X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.05 mm

10 mm

8 mm

STMICROELECTRONICS

BGA

8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-55

compliant

EAR99

8542.32.00.51

Compare

NAND256R3A2BZA6E

Numonyx Memory Solutions

Check for Price Buy

Yes

Obsolete

268.4355 Mbit

32MX8

1.8 V

12 µs

FLASH

32000000

33.5544 M

ASYNCHRONOUS

PARALLEL

1.8 V

1.95 V

1.7 V

CMOS

INDUSTRIAL

SLC NAND TYPE

R-PBGA-B55

Not Qualified

85 °C

-40 °C

NOT SPECIFIED

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.05 mm

10 mm

8 mm

NUMONYX

BGA

8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-55

compliant

EAR99

8542.32.00.51

NAND256R3A2BZA6E

STMicroelectronics

Check for Price Buy

Yes

Transferred

268.4355 Mbit

16K

32MX8

1.8 V

12 µs

FLASH

YES

32000000

33.5544 M

ASYNCHRONOUS

512 words

PARALLEL

1.8 V

YES

50 µA

15 µA

1.95 V

1.7 V

CMOS

INDUSTRIAL

SLC NAND TYPE

R-PBGA-B55

Not Qualified

85 °C

-40 °C

260

NOT SPECIFIED

PLASTIC/EPOXY

TFBGA

BGA55,8X12,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

YES

BALL

800 µm

BOTTOM

1.05 mm

10 mm

8 mm

STMICROELECTRONICS

BGA

8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFBGA-55

compliant

EAR99

8542.32.00.51

Parametric results for: nand256r3a2bza6e under Flash Memories