Parametric results for: mty25n60e under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

HIGH VOLTAGE 2

5 hits Apply

3000.0 mJ 4

5 hits Apply

Configuration (2)

Single 1 SINGLE WITH BUILT-IN DIODE 4

5 hits Apply

DS Breakdown Voltage-Min (1)

600 V 4

5 hits Apply

Drain Current-Max (Abs) (ID) (1)

25 A 1

5 hits Apply

Drain Current-Max (ID) (1)

25 A 4

5 hits Apply

Drain-source On Resistance-Max (1)

210 mΩ 4

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

250 pF 2

5 hits Apply

TO-264AA 4

5 hits Apply

R-PSFM-T3 4

5 hits Apply

e0 3

5 hits Apply

Manufacturer (5)

Freescale Semiconductor 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 onsemi 1 Rochester Electronics LLC 1

5 hits Apply

Number of Elements (1)

1 4

5 hits Apply

Number of Terminals (1)

3 4

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 4

5 hits Apply

PLASTIC/EPOXY 4

5 hits Apply

RECTANGULAR 4

5 hits Apply

FLANGE MOUNT 4

5 hits Apply

Active 1 Obsolete 2 Transferred 2

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

300 W 2

5 hits Apply

300 W 4

5 hits Apply

Surface Mount (1)

NO 5

5 hits Apply