Parametric results for: mjd122t4g under Power Bipolar Transistors

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Manufacturer Part Number: mjd122t4g
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MJD122T4G
onsemi
$0.4615 Yes Yes Active 100 V 8 A NPN YES DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 2 1 100 4 MHz 20 W SWITCHING SILICON R-PSSO-G2 e3 Not Qualified 1 150 °C 260 30 COLLECTOR PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE ONSEMI DPAK (SINGLE GAUGE) TO-252 LEAD FREE, PLASTIC, CASE 369C-01, DPAK-3 3 369C not_compliant EAR99 8541.29.00.95 onsemi
NJVMJD122T4G
onsemi
Check for Price Yes Yes Active 100 V 8 A NPN YES DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 2 1 100 4 MHz 20 W AMPLIFIER SILICON R-PSSO-G2 e3 AEC-Q101 1 150 °C -65 °C 260 30 COLLECTOR PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE ONSEMI DPAK (SINGLE GAUGE) TO-252 DPAK-3/2 3 369C not_compliant EAR99 onsemi
NJVMJD122T4G-VF01
onsemi
Check for Price Yes Yes Obsolete 100 V 8 A NPN YES DARLINGTON WITH BUILT-IN DIODE AND RESISTOR 2 1 100 AMPLIFIER SILICON R-PSSO-G2 e3 AEC-Q101 1 150 °C -65 °C 260 30 COLLECTOR PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING SINGLE ONSEMI 369C not_compliant EAR99 onsemi 2017-01-31