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M48Z12-200PC6
STMicroelectronics
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Check for Price | Yes | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 200 ns | NON-VOLATILE SRAM MODULE | BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION | 1 | 1 | 2000 | 2.048 k | ASYNCHRONOUS | 3-STATE | YES | PARALLEL | 3 mA | 80 µA | 5.5 V | 4.5 V | CMOS | INDUSTRIAL | R-PDIP-T24 | Not Qualified | e3 | 85 °C | -40 °C | 24 | PLASTIC/EPOXY | DIP | DIP24,.6 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | 9.65 mm | 34.545 mm | 15.24 mm | STMICROELECTRONICS | DIP | 0.600 INCH, ROHS COMPLIANT, CAPHAT, PLASTIC, DIP-24 | 24 | compliant | EAR99 | 8542.32.00.41 | ||||
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M48Z12-200PC6TR
STMicroelectronics
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Check for Price | Yes | Yes | Obsolete | 16.384 kbit | 8 | 2KX8 | 5 V | 200 ns | APPLICATION SPECIFIC SRAM | 2000 | 2.048 k | 3 mA | 80 µA | CMOS | INDUSTRIAL | R-PDIP-T24 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 24 | PLASTIC/EPOXY | DIP | DIP24,.6 | RECTANGULAR | IN-LINE | NO | MATTE TIN | THROUGH-HOLE | 2.54 mm | DUAL | STMICROELECTRONICS | DIP, DIP24,.6 | compliant | EAR99 | 8542.32.00.41 |