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JANTXV1N5809US
Microchip Technology Inc
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$12.2856 | No | Active | 3 A | 30 ns | 5 W | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | HIGH RELIABILITY, METALLURGICALLY BONDED | ULTRA FAST RECOVERY | 125 A | 1 | Qualified | O-LELF-R2 | e0 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, MELF-2 | compliant | |||||||||
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JANTXV1N5809US/TR
Microchip Technology Inc
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$12.3317 | Yes | Active | 3 A | 30 ns | 5 W | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | HIGH RELIABILITY, METALLURGICALLY BONDED | ULTRA FAST RECOVERY | 125 A | 1 | Qualified | O-LELF-R2 | e0 | MIL-19500 | 175 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | unknown | EAR99 | 8541.10.00.80 | ||||||
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JANTXV1N5809
Microchip Technology Inc
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$15.3434 | No | Active | 3 A | 30 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 100 V | 1 | HIGH RELIABILITY, METALLURGICALLY BONDED | ULTRA FAST RECOVERY | 125 A | 1 | Qualified | O-LALF-W2 | e0 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD OVER NICKEL | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS PACKAGE-2 | compliant | ||||||||||
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JANTXV1N5809/TR
Microchip Technology Inc
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$15.5081 | Yes | Active | 3 A | 30 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 100 V | 1 | HIGH RELIABILITY, METALLURGICALLY BONDED | ULTRA FAST RECOVERY | 125 A | 1 | Qualified | O-LALF-W2 | e0 | MIL-19500 | 175 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD OVER NICKEL | WIRE | AXIAL | MICROCHIP TECHNOLOGY INC | unknown | |||||||||
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JANTXV1N5809URS
Microchip Technology Inc
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$25.2784 | No | Active | 3 A | 30 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | HIGH RELIABILITY, METALLURGICALLY BONDED | ULTRA FAST RECOVERY | 125 A | 1 | Qualified | O-LELF-R2 | MIL-19500 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROCHIP TECHNOLOGY INC | HERMETIC SEALED, GLASS, MELF-2 | compliant | ||||||||||||
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JANTXV1N5809R
Bkc Semiconductors Inc
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Check for Price | Transferred | 6 A | 875 mV | 30 ns | 5 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | FAST RECOVERY | 125 A | 1 | Not Qualified | O-LALF-W2 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WIRE | AXIAL | BKC SEMICONDUCTORS INC | unknown | EAR99 | 8541.10.00.80 | |||||||||||||||
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JANTXV1N5809US
Micross Components
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Check for Price | Active | 1.7 A | 875 mV | 30 ns | 5 µA | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | SUPER FAST SOFT RECOVERY | 125 A | 1 | 100 V | Qualified | O-LELF-R2 | MIL-PRF-19500 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | MICROSS COMPONENTS | unknown | ||||||||||||||
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JANTXV1N5809
Bkc Semiconductors Inc
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Check for Price | No | Transferred | 6 A | 875 mV | 30 ns | 5 µA | SILICON | RECTIFIER DIODE | SINGLE | NO | 100 V | 1 | FAST RECOVERY | 125 A | 1 | Not Qualified | O-LALF-W2 | e0 | 175 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | Tin/Lead (Sn/Pb) | WIRE | AXIAL | BKC SEMICONDUCTORS INC | unknown | EAR99 | 8541.10.00.80 | ||||||||||
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JANTXV1N5809US
VPT Components
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Check for Price | No | Active | 3 A | 30 ns | SILICON | RECTIFIER DIODE | SINGLE | YES | 100 V | 1 | ULTRA FAST RECOVERY POWER | 125 A | 1 | Qualified | O-LELF-R2 | MIL-19500 | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | VPT COMPONENTS | compliant | EAR99 | 8541.10.00.80 | ||||||||||||
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JANTXV1N5809R
Microsemi Corporation
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Check for Price | Obsolete | 6 A | 30 ns | SILICON | RECTIFIER DIODE | SINGLE | NO | 1 | FAST RECOVERY | 125 A | 1 | Not Qualified | O-LALF-W2 | e0 | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WIRE | AXIAL | MICROSEMI CORP | O-LALF-W2 | compliant | EAR99 | 8541.10.00.80 |