Parametric results for: jans2n3637l under Small Signal Bipolar Transistors

All Filters Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Collector Current-Max (IC) (1)

1 A 6

9 hits Apply

10 pF 1

9 hits Apply

Collector-Emitter Voltage-Max (1)

175 V 5

9 hits Apply

Configuration (2)

SINGLE 5 Single 1

9 hits Apply

DC Current Gain-Min (hFE) (2)

60.0 5 100.0 1

Min - Max

9 hits Apply

TO-5 5

9 hits Apply

O-MBCY-W3 5

9 hits Apply

e0 2

9 hits Apply

Manufacturer (9)

Defense Logistics Agency 1 Freescale Semiconductor 1 Microchip Technology Inc 1 Microsemi Corporation 1 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 New England Semiconductor 1 Semicoa Semiconductors 1 VPT Components 1

9 hits Apply

Number of Elements (1)

1 5

9 hits Apply

Number of Terminals (1)

3 5

9 hits Apply

200.0 °C 2

9 hits Apply

-65.0 °C 1

9 hits Apply

METAL 5

9 hits Apply

ROUND 5

9 hits Apply

CYLINDRICAL 5

9 hits Apply

Active 3 Contact Manufacturer 1 Obsolete 3 Transferred 2

9 hits Apply

No 1

9 hits Apply

Polarity/Channel Type (1)

PNP 6

9 hits Apply

1 W 1

9 hits Apply

1 W 2

9 hits Apply

Surface Mount (1)

NO 6

9 hits Apply