Parametric results for: jan2n6798u under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

SOURCE 1

3 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 1

3 hits Apply

DS Breakdown Voltage-Min (1)

200 V 1

3 hits Apply

Drain Current-Max (ID) (1)

5.5 A 2

3 hits Apply

Drain-source On Resistance-Max (1)

420 mΩ 1

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

3 hits Apply

R-CQCC-N15 1

3 hits Apply

e0 1 e4 1

3 hits Apply

Manufacturer (3)

Defense Logistics Agency 1 International Rectifier 1 Microsemi Corporation 1

3 hits Apply

Number of Elements (1)

1 2

3 hits Apply

Number of Terminals (1)

15 1

3 hits Apply

ENHANCEMENT MODE 1

3 hits Apply

150.0 °C 1

3 hits Apply

CERAMIC, METAL-SEALED COFIRED 1

3 hits Apply

RECTANGULAR 1

3 hits Apply

CHIP CARRIER 1

3 hits Apply

Active 1 Obsolete 2

3 hits Apply

Yes 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

3 hits Apply

25 W 1

3 hits Apply

Surface Mount (1)

YES 2

3 hits Apply