Parametric results for: jan2n6661 under Small Signal Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

LOW THRESHOLD 4

6 hits Apply

DRAIN 1

6 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 6

6 hits Apply

DS Breakdown Voltage-Min (1)

90 V 6

6 hits Apply

Drain Current-Max (ID) (1)

860 mA 6

6 hits Apply

Drain-source On Resistance-Max (1)

4 Ω 6

6 hits Apply

METAL-OXIDE SEMICONDUCTOR 6

6 hits Apply

10 pF 6

6 hits Apply

TO-205AD 5

6 hits Apply

O-MBCY-W3 5 R-XDSO-N3 1

6 hits Apply

e0 2

6 hits Apply

Manufacturer (5)

Defense Logistics Agency 1 Temic Semiconductors 1 Vishay Intertechnologies 1 Vishay Siliconix 1 VPT Components 2

6 hits Apply

1 1

6 hits Apply

Number of Elements (1)

1 6

6 hits Apply

Number of Terminals (1)

3 6

6 hits Apply

ENHANCEMENT MODE 6

6 hits Apply

150.0 °C 2

6 hits Apply

-65.0 °C 2

6 hits Apply

METAL 5 UNSPECIFIED 1

6 hits Apply

RECTANGULAR 1 ROUND 5

6 hits Apply

CYLINDRICAL 5 SMALL OUTLINE 1

6 hits Apply

Active 3 Obsolete 3

6 hits Apply

No 2

6 hits Apply

NOT SPECIFIED 1

6 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 6

6 hits Apply

570 mW 1 725 mW 1

Min (W) - Max (W)

6 hits Apply

2.5 W 1 6.25 W 1

Min (W) - Max (W)

6 hits Apply

Surface Mount (2)

NO 5 YES 1

6 hits Apply