Parametric results for: ixty01n100 under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 1

4 hits Apply

DRAIN 4

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

1 kV 3

4 hits Apply

Drain Current-Max (ID) (2)

100 mA 3 400 mA 1

Min (A) - Max (A)

4 hits Apply

Drain-source On Resistance-Max (2)

80 Ω 3 110 Ω 1

Min (Ω) - Max (Ω)

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

2 pF 1

4 hits Apply

TO-252AA 4

4 hits Apply

R-PSSO-G2 4

4 hits Apply

e3 4

4 hits Apply

Manufacturer (2)

IXYS Corporation 2 Littelfuse Inc 2

4 hits Apply

1 4

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

2 4

4 hits Apply

DEPLETION MODE 2 ENHANCEMENT MODE 2

4 hits Apply

150.0 °C 4

4 hits Apply

-55.0 °C 2

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

SMALL OUTLINE 4

4 hits Apply

Active 2 Transferred 2

4 hits Apply

Yes 2

4 hits Apply

260 4

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

1.1 W 1

4 hits Apply

25 W 3

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply