Parametric results for: ixtq30n50l under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 1

4 hits Apply

1500.0 mJ 4

4 hits Apply

DRAIN 4

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE AND RESISTOR 4

4 hits Apply

DS Breakdown Voltage-Min (1)

500 V 4

4 hits Apply

Drain Current-Max (ID) (1)

30 A 4

4 hits Apply

Drain-source On Resistance-Max (2)

200 mΩ 3 215 mΩ 1

Min (Ω) - Max (Ω)

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

115 pF 1 127 pF 1

Min (pF) - Max (pF)

4 hits Apply

R-PSFM-T3 4

4 hits Apply

e3 4

4 hits Apply

Manufacturer (2)

IXYS Corporation 2 Littelfuse Inc 2

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

3 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 4

4 hits Apply

-55.0 °C 2

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

FLANGE MOUNT 4

4 hits Apply

Active 2 Transferred 2

4 hits Apply

Yes 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

400 W 3

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply