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IRFE120-JQR-BE4
TT Electronics Resistors
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Check for Price Buy | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 15 | 100 V | 1 | 4.5 A | 345 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 18 A | SWITCHING | SILICON | R-CQCC-N15 | e4 | Not Qualified | 150 °C | SOURCE | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | GOLD | NO LEAD | QUAD | TT ELECTRONICS PLC | CHIP CARRIER, R-CQCC-N15 | compliant | EAR99 | |||||||||||||||
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IRFE120-JQR-BE4
TT Electronics Power and Hybrid / Semelab Limited
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Check for Price Buy | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 15 | 100 V | 1 | 4.5 A | 345 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 18 A | SWITCHING | SILICON | R-CQCC-N15 | e4 | Not Qualified | 150 °C | SOURCE | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | GOLD | NO LEAD | QUAD | SEMELAB LTD | CHIP CARRIER, R-CQCC-N15 | compliant | EAR99 | 18 | |||||||||||||
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IRFE120E4
TT Electronics Resistors
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Check for Price Buy | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 16 | 100 V | 1 | 4.5 A | 345 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 18 A | SWITCHING | SILICON | R-CQCC-N16 | e4 | Not Qualified | 150 °C | SOURCE | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | GOLD | NO LEAD | QUAD | TT ELECTRONICS PLC | CHIP CARRIER, R-CQCC-N16 | compliant | EAR99 | |||||||||||||||
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IRFE120E4
TT Electronics Power and Hybrid / Semelab Limited
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Check for Price Buy | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 16 | 100 V | 1 | 4.5 A | 345 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 18 A | SWITCHING | SILICON | R-CQCC-N16 | e4 | Not Qualified | 150 °C | SOURCE | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | GOLD | NO LEAD | QUAD | SEMELAB LTD | CHIP CARRIER, R-CQCC-N16 | compliant | EAR99 | 18 | LCC | ||||||||||||
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IRFE120
Infineon Technologies AG
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Check for Price Buy | No | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 18 | 100 V | 1 | 4.5 A | 350 mΩ | AVALANCHE ENERGY RATED | 0.242 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 14 W | 18 A | SWITCHING | SILICON | R-CQCC-N18 | e0 | Not Qualified | 1 | 150 °C | SOURCE | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | Tin/Lead (Sn/Pb) | NO LEAD | QUAD | INFINEON TECHNOLOGIES AG | CHIP CARRIER, R-CQCC-N18 | not_compliant | EAR99 | |||||||||||
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IRFE120
TT Electronics Power and Hybrid / Semelab Limited
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Check for Price Buy | No | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 16 | 100 V | 1 | 4.5 A | 345 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 18 A | SWITCHING | SILICON | R-CQCC-N16 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | SOURCE | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | NO LEAD | QUAD | SEMELAB LTD | CHIP CARRIER, R-CQCC-N16 | compliant | EAR99 | 18 | LCC | ||||||||||||
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IRFE120PBF
International Rectifier
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Check for Price Buy | Yes | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 18 | 100 V | 1 | 4.5 A | 350 mΩ | AVALANCHE ENERGY RATED | 0.242 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 14 W | 18 A | SWITCHING | SILICON | 110 ns | 110 ns | R-CQCC-N18 | Not Qualified | 150 °C | 260 | 40 | SOURCE | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | NO LEAD | QUAD | INTERNATIONAL RECTIFIER CORP | CHIP CARRIER, R-CQCC-N18 | compliant | EAR99 | 3 | TO-39 | 8541.29.00.95 | ||||||
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IRFE120-JQR-B
TT Electronics Resistors
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Check for Price Buy | No | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 16 | 100 V | 1 | 4.5 A | 345 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 18 A | SWITCHING | SILICON | R-CQCC-N16 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | SOURCE | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | NO LEAD | QUAD | TT ELECTRONICS PLC | CHIP CARRIER, R-CQCC-N16 | compliant | EAR99 | |||||||||||||||
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IRFE120
TT Electronics Resistors
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Check for Price Buy | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 16 | 100 V | 1 | 4.5 A | 345 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 18 A | SWITCHING | SILICON | R-CQCC-N16 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | SOURCE | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | NO LEAD | QUAD | TT ELECTRONICS PLC | CHIP CARRIER, R-CQCC-N16 | compliant | EAR99 | |||||||||||||||
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IRFE120-JQR-B
TT Electronics Power and Hybrid / Semelab Limited
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Check for Price Buy | No | No | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 16 | 100 V | 1 | 4.5 A | 345 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 18 A | SWITCHING | SILICON | R-CQCC-N16 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | SOURCE | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | NO LEAD | QUAD | SEMELAB LTD | CHIP CARRIER, R-CQCC-N16 | compliant | EAR99 | 18 | LCC |