Parametric results for: ipb65r660cfda under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

115.0 mJ 4

4 hits Apply

DRAIN 4

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

650 V 4

4 hits Apply

Drain Current-Max (ID) (1)

6 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

660 mΩ 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

TO-252AA 3 TO-263AB 1

4 hits Apply

R-PSSO-G2 4

4 hits Apply

e3 3

4 hits Apply

Manufacturer (1)

Infineon Technologies AG 4

4 hits Apply

1 3

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

2 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

SMALL OUTLINE 4

4 hits Apply

Active 3 Obsolete 1

4 hits Apply

No 3

4 hits Apply

NOT SPECIFIED 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply