Parametric results for: hufa76645s3s under Power Field-Effect Transistors

All Filters Additional Feature Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

ULTRA-LOW RESISTANCE 4

12 hits Apply

DRAIN 10

12 hits Apply

Configuration (2)

SINGLE 2 SINGLE WITH BUILT-IN DIODE 10

12 hits Apply

DS Breakdown Voltage-Min (1)

100 V 10

12 hits Apply

Drain Current-Max (ID) (1)

75 A 12

12 hits Apply

Drain-source On Resistance-Max (2)

14 mΩ 4 15 mΩ 6

Min (Ω) - Max (Ω)

12 hits Apply

METAL-OXIDE SEMICONDUCTOR 12

12 hits Apply

TO-263AB 10

12 hits Apply

R-PSSO-G2 10

12 hits Apply

e3 8

12 hits Apply

Manufacturer (4)

Fairchild Semiconductor Corporation 5 Intersil Corporation 2 onsemi 2 Rochester Electronics LLC 3

12 hits Apply

1 7 NOT APPLICABLE 1

12 hits Apply

Number of Elements (1)

1 12

12 hits Apply

Number of Terminals (1)

2 10

12 hits Apply

ENHANCEMENT MODE 12

12 hits Apply

175.0 °C 7

12 hits Apply

PLASTIC/EPOXY 10

12 hits Apply

RECTANGULAR 10

12 hits Apply

SMALL OUTLINE 10

12 hits Apply

Active 3 Obsolete 6 Transferred 3

12 hits Apply

Yes 5

12 hits Apply

245 2 260 3 NOT APPLICABLE 1

12 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 12

12 hits Apply

310 W 7

12 hits Apply

Surface Mount (1)

YES 12

12 hits Apply