Parametric results for: fds6982as under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 5

5 hits Apply

DS Breakdown Voltage-Min (1)

30 V 5

5 hits Apply

Drain Current-Max (ID) (1)

8.6 A 5

5 hits Apply

Drain-source On Resistance-Max (1)

13.5 mΩ 5

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

R-PDSO-G8 5

5 hits Apply

e3 3

5 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 3 onsemi 1 Rochester Electronics LLC 1

5 hits Apply

1 3

5 hits Apply

Number of Elements (1)

2 5

5 hits Apply

Number of Terminals (1)

8 5

5 hits Apply

ENHANCEMENT MODE 5

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150.0 °C 4

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-55.0 °C 1

5 hits Apply

PLASTIC/EPOXY 5

5 hits Apply

RECTANGULAR 5

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SMALL OUTLINE 5

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Active 1 Obsolete 3 Transferred 1

5 hits Apply

Yes 3

5 hits Apply

260 3 NOT SPECIFIED 1

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Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

2 W 1

5 hits Apply

2 W 3

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply