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FDD6682
Rochester Electronics LLC
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Check for Price Buy | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 30 V | 1 | 75 A | 6.2 mΩ | 240 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 100 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | COMMERCIAL | 1 | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | ROCHESTER ELECTRONICS LLC | TO-252 | DPAK-3 | 3 | unknown | ||||||||||
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FDD6682_NL
Fairchild Semiconductor Corporation
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Check for Price Buy | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 30 V | 1 | 75 A | 6.2 mΩ | 240 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 71 W | 100 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | Not Qualified | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | TO-252 | DPAK-3 | 3 | not_compliant | EAR99 | |||||||||||
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FDD6682
Fairchild Semiconductor Corporation
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Check for Price Buy | Yes | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 30 V | 1 | 75 A | 6.2 mΩ | 240 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 71 W | 100 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | SINGLE | FAIRCHILD SEMICONDUCTOR CORP | DPAK | DPAK-3 | 3 | not_compliant | EAR99 | TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB | 8541.29.00.95 | |||||||
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FDD6682_NL
Rochester Electronics LLC
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Check for Price Buy | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 30 V | 1 | 75 A | 6.2 mΩ | 240 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 100 A | SWITCHING | SILICON | TO-252 | R-PSSO-G2 | COMMERCIAL | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | NOT SPECIFIED | GULL WING | SINGLE | ROCHESTER ELECTRONICS LLC | TO-252 | DPAK-3 | 3 | unknown | |||||||||||
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FDD6682
onsemi
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Check for Price Buy | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 30 V | 1 | 21 A | 6.2 mΩ | 240 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 71 W | 100 A | SWITCHING | SILICON | 96 ns | 57 ns | TO-252 | R-PSSO-G2 | 175 °C | -55 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | ONSEMI | DPAK-3/2 | compliant | EAR99 | TO252A03 |