Parametric results for: bso203p under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOGIC LEVEL COMPATIBLE 2 LOGIC LEVEL COMPATIBLE, AVALANCHE RATED 3

5 hits Apply

97.0 mJ 5

5 hits Apply

Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 5

5 hits Apply

DS Breakdown Voltage-Min (1)

20 V 5

5 hits Apply

Drain Current-Max (ID) (2)

5.7 A 2 8.2 A 3

Min (A) - Max (A)

5 hits Apply

Drain-source On Resistance-Max (1)

21 mΩ 5

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

R-PDSO-G8 5

5 hits Apply

e0 1 e3 2

5 hits Apply

Manufacturer (2)

Infineon Technologies AG 4 Rochester Electronics LLC 1

5 hits Apply

1 1 3 2

5 hits Apply

Number of Elements (1)

2 5

5 hits Apply

Number of Terminals (1)

8 5

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 2

5 hits Apply

PLASTIC/EPOXY 5

5 hits Apply

RECTANGULAR 5

5 hits Apply

SMALL OUTLINE 5

5 hits Apply

Active 1 Obsolete 4

5 hits Apply

Yes 2

5 hits Apply

235 1 260 1 NOT SPECIFIED 1

5 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 5

5 hits Apply

2 W 2

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply