Parametric results for: bso150n03 under Small Signal Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 2

4 hits Apply

Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 4

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DS Breakdown Voltage-Min (1)

30 V 4

4 hits Apply

Drain Current-Max (ID) (2)

7 A 2 7.6 A 2

Min (A) - Max (A)

4 hits Apply

Drain-source On Resistance-Max (1)

15 mΩ 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

100 pF 2

4 hits Apply

MS-012AA 2

4 hits Apply

R-PDSO-G8 4

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e3 3

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Manufacturer (1)

Infineon Technologies AG 4

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3 3

4 hits Apply

Number of Elements (1)

2 4

4 hits Apply

Number of Terminals (1)

8 4

4 hits Apply

ENHANCEMENT MODE 4

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150.0 °C 3

4 hits Apply

PLASTIC/EPOXY 4

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RECTANGULAR 4

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SMALL OUTLINE 4

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Active 3 Obsolete 1

4 hits Apply

Yes 3

4 hits Apply

260 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

1.4 W 1 2 W 1

Min (W) - Max (W)

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply