Parametric results for: aptm120da15g under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 1

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3000.0 mJ 1

1 hit Apply

ISOLATED 1

1 hit Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

1.2 kV 1

1 hit Apply

Drain Current-Max (ID) (1)

60 A 1

1 hit Apply

Drain-source On Resistance-Max (1)

175 mΩ 1

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METAL-OXIDE SEMICONDUCTOR 1

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R-XUFM-X5 1

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e1 1

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Manufacturer (1)

Microsemi Corporation 1

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1 1

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Number of Elements (1)

1 1

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Number of Terminals (1)

5 1

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ENHANCEMENT MODE 1

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150.0 °C 1

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UNSPECIFIED 1

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RECTANGULAR 1

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FLANGE MOUNT 1

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Obsolete 1

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Polarity/Channel Type (1)

N-CHANNEL 1

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1.25 kW 1

1 hit Apply

Surface Mount (1)

NO 1

1 hit Apply