Parametric results for: UPA2816T1S-E2-AT under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Manufacturer Number of Elements Operating Temperature-Max Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SINGLE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

30 V 1

1 hit Apply

Drain Current-Max (ID) (1)

17 A 1

1 hit Apply

Drain-source On Resistance-Max (1)

15.5 mΩ 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

Manufacturer (1)

Renesas Electronics Corporation 1

1 hit Apply

Number of Elements (1)

1 1

1 hit Apply

150.0 °C 1

1 hit Apply

Active 1

1 hit Apply

Yes 1

1 hit Apply

NOT SPECIFIED 1

1 hit Apply

Polarity/Channel Type (1)

P-CHANNEL 1

1 hit Apply

12 W 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply