Parametric results for: UPA2660T1R-E2-AX under Power Field-Effect Transistors

All Filters DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-609 Code Manufacturer Operating Temperature-Max Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount DS Breakdown Voltage-Min (1)

20 V 1

1 hit Apply

Drain Current-Max (ID) (1)

4 A 1

1 hit Apply

Drain-source On Resistance-Max (1)

62 mΩ 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

e4 1

1 hit Apply

Manufacturer (1)

Renesas Electronics Corporation 1

1 hit Apply

150.0 °C 1

1 hit Apply

Obsolete 1

1 hit Apply

Yes 1

1 hit Apply

260 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

2.3 W 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply