Parametric results for: SI6963BDQ-T1-E3 under Small Signal Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

20 V 1

1 hit Apply

Drain Current-Max (ID) (1)

3.4 A 1

1 hit Apply

Drain-source On Resistance-Max (1)

45 mΩ 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

R-PDSO-G8 1

1 hit Apply

e3 1

1 hit Apply

Manufacturer (1)

Vishay Intertechnologies 1

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1 1

1 hit Apply

Number of Elements (1)

2 1

1 hit Apply

Number of Terminals (1)

8 1

1 hit Apply

ENHANCEMENT MODE 1

1 hit Apply

150.0 °C 1

1 hit Apply

PLASTIC/EPOXY 1

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RECTANGULAR 1

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SMALL OUTLINE 1

1 hit Apply

Obsolete 1

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Polarity/Channel Type (1)

P-CHANNEL 1

1 hit Apply

1.13 W 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply