Parametric results for: S29GL256S11FHIV20 under EEPROMs

All Filters Access Time-Max Command User Interface Common Flash Interface Data Polling Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Sectors/Size Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Page Size Sector Size Supply Voltage-Nom (Vsup) Access Time-Max (1)

110 ns 1

3 hits Apply

YES 1

3 hits Apply

YES 1

3 hits Apply

YES 1

3 hits Apply

20 1

3 hits Apply

100000.0 Write/Erase Cycles 1

3 hits Apply

R-PBGA-B64 1

3 hits Apply

e1 1

3 hits Apply

13 mm 1

3 hits Apply

Manufacturer (3)

Cypress Semiconductor 1 Infineon Technologies AG 1 Spansion 1

3 hits Apply

Memory Density (1)

268.4355 Mbit 1

3 hits Apply

FLASH 1

3 hits Apply

Memory Width (1)

16 1

3 hits Apply

3 1

3 hits Apply

1.0 1

3 hits Apply

256 1

3 hits Apply

64 1

3 hits Apply

16.7772 M 1

3 hits Apply

1.6E7 1

3 hits Apply

ASYNCHRONOUS 1

3 hits Apply

85.0 °C 1

3 hits Apply

-40.0 °C 1

3 hits Apply

Organization (1)

16MX16 1

3 hits Apply

3-STATE 1

3 hits Apply

PLASTIC/EPOXY 1

3 hits Apply

LBGA 1

3 hits Apply

BGA64,8X8,40 1

3 hits Apply

RECTANGULAR 1

3 hits Apply

GRID ARRAY, LOW PROFILE 1

3 hits Apply

16 words 1

3 hits Apply

Sector Size (1)

64K 1

3 hits Apply

Supply Voltage-Nom (Vsup) (1)

3 V 1

3 hits Apply