Parametric results for: S25FL512SAGMFVR11 under Flash Memories

All Filters Clock Frequency-Max (fCLK) Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Clock Frequency-Max (fCLK) (1)

133 MHz 3

3 hits Apply

20 3

3 hits Apply

100000.0 Write/Erase Cycles 3

3 hits Apply

R-PDSO-G16 3

3 hits Apply

e3 2

3 hits Apply

10.3 mm 3

3 hits Apply

Manufacturer (3)

Cypress Semiconductor 1 Infineon Technologies AG 1 Spansion 1

3 hits Apply

Memory Density (2)

512.7537 Mbit 2 536.8709 Mbit 1

Min (bit) - Max (bit)

3 hits Apply

FLASH 3

3 hits Apply

Memory Width (1)

8 3

3 hits Apply

3 2

3 hits Apply

1.0 3

3 hits Apply

16 3

3 hits Apply

64.0942 M 2 67.1089 M 1

Min (words) - Max (words)

3 hits Apply

6.4E7 3

3 hits Apply

SYNCHRONOUS 3

3 hits Apply

105.0 °C 3

3 hits Apply

-40.0 °C 3

3 hits Apply

Organization (1)

64MX8 3

3 hits Apply

3-STATE 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

SOP 3

3 hits Apply

SOP16,.4 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE 3

3 hits Apply

Supply Voltage-Nom (Vsup) (1)

3 V 3

3 hits Apply