Parametric results for: RSS100N03 under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 4

5 hits Apply

DS Breakdown Voltage-Min (1)

30 V 4

5 hits Apply

Drain Current-Max (ID) (1)

10 A 5

5 hits Apply

Drain-source On Resistance-Max (2)

18.5 mΩ 1 18.9 mΩ 3

Min (Ω) - Max (Ω)

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

200 pF 1

5 hits Apply

R-PDSO-G8 4

5 hits Apply

e2 3

5 hits Apply

Manufacturer (1)

ROHM Semiconductor 5

5 hits Apply

1 5

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

8 4

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 4

5 hits Apply

PLASTIC/EPOXY 4

5 hits Apply

RECTANGULAR 4

5 hits Apply

SMALL OUTLINE 4

5 hits Apply

Active 1 Not Recommended 1 Obsolete 3

5 hits Apply

Yes 2

5 hits Apply

260 5

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

2 W 4

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply