Parametric results for: M29F040-70XN6RTR under Flash Memories

All Filters Access Time-Max Additional Feature Command User Interface Data Polling Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Sectors/Size Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Sector Size Supply Voltage-Nom (Vsup) Access Time-Max (1)

70 ns 1

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100000 ERASE/PROGRAM CYCLES; 20 YEARS DATA RETENTION; BLOCK ERASE; BYTE PROGRAMMABLE 1

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YES 1

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YES 1

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20 1

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100000.0 Write/Erase Cycles 1

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R-PDSO-G32 1

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e0 1

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18.4 mm 1

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Manufacturer (1)

STMicroelectronics 1

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Memory Density (1)

4.1943 Mbit 1

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FLASH 1

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Memory Width (1)

8 1

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1.0 1

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8 1

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32 1

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524.288 k 1

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512000.0 1

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ASYNCHRONOUS 1

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85.0 °C 1

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-40.0 °C 1

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Organization (1)

512KX8 1

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3-STATE 1

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PLASTIC/EPOXY 1

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TSOP1-R 1

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TSSOP32,.8,20 1

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RECTANGULAR 1

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SMALL OUTLINE, THIN PROFILE 1

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Sector Size (1)

64K 1

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Supply Voltage-Nom (Vsup) (1)

5 V 1

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