Parametric results for: M25P16-VMN3G under Flash Memories

All Filters Clock Frequency-Max (fCLK) Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Clock Frequency-Max (fCLK) (2)

25 MHz 2 50 MHz 1

Min (MHz) - Max (MHz)

3 hits Apply

20 3

3 hits Apply

10000.0 Write/Erase Cycles 1 100000.0 Write/Erase Cycles 2

Min (Write/EraseCycles) - Max (Write/EraseCycles)

3 hits Apply

R-PDSO-G8 3

3 hits Apply

e4 1

3 hits Apply

4.9 mm 3

3 hits Apply

Manufacturer (3)

Micron Technology Inc 1 Numonyx Memory Solutions 1 STMicroelectronics 1

3 hits Apply

Memory Density (1)

16.7772 Mbit 3

3 hits Apply

FLASH 3

3 hits Apply

Memory Width (1)

8 3

3 hits Apply

1 1

3 hits Apply

1.0 3

3 hits Apply

8 3

3 hits Apply

2.0972 M 3

3 hits Apply

2000000.0 3

3 hits Apply

SYNCHRONOUS 3

3 hits Apply

125.0 °C 3

3 hits Apply

-40.0 °C 3

3 hits Apply

Organization (1)

2MX8 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

SOP 3

3 hits Apply

SOP8,.25 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

SMALL OUTLINE 3

3 hits Apply

Supply Voltage-Nom (Vsup) (1)

3 V 3

3 hits Apply