Parametric results for: JANTXV2N5157 under Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

COLLECTOR 8

11 hits Apply

Collector Current-Max (IC) (1)

3.5 A 11

11 hits Apply

250 pF 2

11 hits Apply

Collector-Emitter Voltage-Max (2)

400 V 1 500 V 8

Min (V) - Max (V)

11 hits Apply

Configuration (1)

SINGLE 11

11 hits Apply

DC Current Gain-Min (hFE) (2)

5.0 9 30.0 2

Min - Max

11 hits Apply

TO-204AA 1 TO-3 3

11 hits Apply

O-MBFM-P2 9

11 hits Apply

e0 2

11 hits Apply

Manufacturer (11)

Boca Semiconductor Inc 1 Cobham PLC 1 Cobham Semiconductor Solutions 1 Defense Logistics Agency 1 MACOM 1 Microchip Technology Inc 1 Microsemi Corporation 1 New England Semiconductor 1 Solitron Devices Inc 1 Vishay HiRel Systems 1 VPT Components 1

11 hits Apply

Number of Elements (1)

1 11

11 hits Apply

Number of Terminals (1)

2 9

11 hits Apply

140.0 °C 2 200.0 °C 2

Min (°C) - Max (°C)

11 hits Apply

-65.0 °C 2

11 hits Apply

METAL 9

11 hits Apply

ROUND 9

11 hits Apply

FLANGE MOUNT 9

11 hits Apply

Active 3 Contact Manufacturer 1 Obsolete 3 Transferred 4

11 hits Apply

NOT SPECIFIED 1

11 hits Apply

Polarity/Channel Type (1)

NPN 11

11 hits Apply

5 W 2

11 hits Apply

100 W 3 125 W 1

Min (W) - Max (W)

11 hits Apply

Surface Mount (1)

NO 11

11 hits Apply

Transition Frequency-Nom (fT) (1)

2.8 MHz 2

11 hits Apply