Parametric results for: JANSR2N7467U2 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

RADIATION HARDENED 3

4 hits Apply

500.0 mJ 4

4 hits Apply

DRAIN 4

4 hits Apply

Configuration (2)

SINGLE 3 SINGLE WITH BUILT-IN DIODE 1

4 hits Apply

DS Breakdown Voltage-Min (1)

30 V 4

4 hits Apply

Drain Current-Max (ID) (1)

75 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

3.5 mΩ 3

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

150 pF 1

4 hits Apply

R-CBCC-N3 3 S-CSSO-G2 1

4 hits Apply

e0 2

4 hits Apply

Manufacturer (3)

Defense Logistics Agency 1 Infineon Technologies AG 2 International Rectifier 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (2)

2 1 3 3

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 3

4 hits Apply

-55.0 °C 1

4 hits Apply

CERAMIC, METAL-SEALED COFIRED 4

4 hits Apply

RECTANGULAR 3 SQUARE 1

4 hits Apply

CHIP CARRIER 3 SMALL OUTLINE 1

4 hits Apply

Active 3 Transferred 1

4 hits Apply

No 1

4 hits Apply

NOT SPECIFIED 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

250 W 3

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply