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JANSR2N7389
Infineon Technologies AG
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Check for Price | No | Active | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 6.5 A | 350 mΩ | HIGH RELIABILITY | 165 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 26 A | SWITCHING | SILICON | TO-205AF | O-CBCY-W3 | e0 | Qualified | MIL-19500/630 | CERAMIC, METAL-SEALED COFIRED | ROUND | CYLINDRICAL | Tin/Lead (Sn/Pb) | WIRE | BOTTOM | INFINEON TECHNOLOGIES AG | compliant | EAR99 | Infineon | ||||||||||
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JANSR2N7389U
Microsemi Corporation
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Check for Price | Yes | Yes | Obsolete | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 15 | 100 V | 1 | 6.5 A | 350 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | R-XQCC-N15 | e4 | Qualified | MIL-19500/630 | SOURCE | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | GOLD OVER NICKEL | NO LEAD | QUAD | MICROSEMI CORP | compliant | EAR99 | LCC | ROHS COMPLIANT, LCC-18 | 18 | |||||||||||
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JANSR2N7389
International Rectifier
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Check for Price | No | Transferred | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 6.5 A | 350 mΩ | HIGH RELIABILITY | 165 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 26 A | SWITCHING | SILICON | TO-205AF | O-CBCY-W3 | Qualified | MIL-19500/630 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | CERAMIC, METAL-SEALED COFIRED | ROUND | CYLINDRICAL | WIRE | BOTTOM | INTERNATIONAL RECTIFIER CORP | compliant | HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN | ||||||||||
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JANSR2N7389U
Infineon Technologies AG
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Check for Price | No | Active | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 15 | 100 V | 1 | 6.5 A | 350 mΩ | 165 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 26 A | SWITCHING | SILICON | R-CQCC-N15 | e0 | Qualified | MIL-19500/630 | SOURCE | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | Tin/Lead (Sn/Pb) | NO LEAD | QUAD | INFINEON TECHNOLOGIES AG | compliant | EAR99 | ||||||||||||
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JANSR2N7389U
Defense Logistics Agency
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Check for Price | Obsolete | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 15 | 100 V | 1 | 6.5 A | 350 mΩ | 165 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 26 A | SWITCHING | SILICON | R-CQCC-N15 | Qualified | MIL-19500/630 | NOT SPECIFIED | NOT SPECIFIED | SOURCE | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | NO LEAD | QUAD | DEFENSE LOGISTICS AGENCY | unknown | EAR99 | HERMETIC SEALED, CERAMIC, LCC-18 | ||||||||||||
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JANSR2N7389U
International Rectifier
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Check for Price | No | No | Transferred | P-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 15 | 100 V | 1 | 6.5 A | 350 mΩ | 165 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 26 A | SWITCHING | SILICON | R-CQCC-N15 | e0 | Not Qualified | MIL-19500/630 | SOURCE | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | TIN LEAD | NO LEAD | QUAD | INTERNATIONAL RECTIFIER CORP | compliant | EAR99 | LCC | HERMETIC SEALED, CERAMIC, LCC-18 | 18 | ||||||||
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JANSR2N7389
Microsemi Corporation
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Check for Price | Yes | Yes | Obsolete | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 6.5 A | 350 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | TO-205AF | O-MBCY-W3 | e4 | Qualified | MIL-19500/630 | DRAIN | METAL | ROUND | CYLINDRICAL | GOLD OVER NICKEL | WIRE | BOTTOM | MICROSEMI CORP | compliant | EAR99 | BCY | MODIFIED TO-39, 3 PIN | 2 | ||||||||||
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JANSR2N7389
Defense Logistics Agency
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Check for Price | Obsolete | P-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 6.5 A | 350 mΩ | HIGH RELIABILITY | 165 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 26 A | SWITCHING | SILICON | TO-205AF | O-CBCY-W3 | Qualified | MIL-19500/630 | NOT SPECIFIED | NOT SPECIFIED | CERAMIC, METAL-SEALED COFIRED | ROUND | CYLINDRICAL | WIRE | BOTTOM | DEFENSE LOGISTICS AGENCY | unknown | EAR99 | HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN |