Parametric results for: JANSR2N7389 under Power Field-Effect Transistors

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Manufacturer Part Number: jansr2n7389
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JANSR2N7389
Infineon Technologies AG
Check for Price No Active P-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 6.5 A 350 mΩ HIGH RELIABILITY 165 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 26 A SWITCHING SILICON TO-205AF O-CBCY-W3 e0 Qualified MIL-19500/630 CERAMIC, METAL-SEALED COFIRED ROUND CYLINDRICAL Tin/Lead (Sn/Pb) WIRE BOTTOM INFINEON TECHNOLOGIES AG compliant EAR99 Infineon
JANSR2N7389U
Microsemi Corporation
Check for Price Yes Yes Obsolete P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 15 100 V 1 6.5 A 350 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SILICON R-XQCC-N15 e4 Qualified MIL-19500/630 SOURCE UNSPECIFIED RECTANGULAR CHIP CARRIER GOLD OVER NICKEL NO LEAD QUAD MICROSEMI CORP compliant EAR99 LCC ROHS COMPLIANT, LCC-18 18
JANSR2N7389
International Rectifier
Check for Price No Transferred P-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 6.5 A 350 mΩ HIGH RELIABILITY 165 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 26 A SWITCHING SILICON TO-205AF O-CBCY-W3 Qualified MIL-19500/630 150 °C NOT SPECIFIED NOT SPECIFIED CERAMIC, METAL-SEALED COFIRED ROUND CYLINDRICAL WIRE BOTTOM INTERNATIONAL RECTIFIER CORP compliant HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN
JANSR2N7389U
Infineon Technologies AG
Check for Price No Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 15 100 V 1 6.5 A 350 mΩ 165 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 26 A SWITCHING SILICON R-CQCC-N15 e0 Qualified MIL-19500/630 SOURCE CERAMIC, METAL-SEALED COFIRED RECTANGULAR CHIP CARRIER Tin/Lead (Sn/Pb) NO LEAD QUAD INFINEON TECHNOLOGIES AG compliant EAR99
JANSR2N7389U
Defense Logistics Agency
Check for Price Obsolete P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 15 100 V 1 6.5 A 350 mΩ 165 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 26 A SWITCHING SILICON R-CQCC-N15 Qualified MIL-19500/630 NOT SPECIFIED NOT SPECIFIED SOURCE CERAMIC, METAL-SEALED COFIRED RECTANGULAR CHIP CARRIER NO LEAD QUAD DEFENSE LOGISTICS AGENCY unknown EAR99 HERMETIC SEALED, CERAMIC, LCC-18
JANSR2N7389U
International Rectifier
Check for Price No No Transferred P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 15 100 V 1 6.5 A 350 mΩ 165 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 26 A SWITCHING SILICON R-CQCC-N15 e0 Not Qualified MIL-19500/630 SOURCE CERAMIC, METAL-SEALED COFIRED RECTANGULAR CHIP CARRIER TIN LEAD NO LEAD QUAD INTERNATIONAL RECTIFIER CORP compliant EAR99 LCC HERMETIC SEALED, CERAMIC, LCC-18 18
JANSR2N7389
Microsemi Corporation
Check for Price Yes Yes Obsolete P-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 6.5 A 350 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SILICON TO-205AF O-MBCY-W3 e4 Qualified MIL-19500/630 DRAIN METAL ROUND CYLINDRICAL GOLD OVER NICKEL WIRE BOTTOM MICROSEMI CORP compliant EAR99 BCY MODIFIED TO-39, 3 PIN 2
JANSR2N7389
Defense Logistics Agency
Check for Price Obsolete P-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 6.5 A 350 mΩ HIGH RELIABILITY 165 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 26 A SWITCHING SILICON TO-205AF O-CBCY-W3 Qualified MIL-19500/630 NOT SPECIFIED NOT SPECIFIED CERAMIC, METAL-SEALED COFIRED ROUND CYLINDRICAL WIRE BOTTOM DEFENSE LOGISTICS AGENCY unknown EAR99 HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN