Parametric results for: JAN2N6308 under Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount Transition Frequency-Nom (fT)

COLLECTOR 7 ISOLATED 1

11 hits Apply

Collector Current-Max (IC) (1)

8 A 8

11 hits Apply

Collector-Emitter Voltage-Max (1)

350 V 8

11 hits Apply

Configuration (1)

SINGLE 8

11 hits Apply

DC Current Gain-Min (hFE) (2)

3.0 7 12.0 1

Min - Max

11 hits Apply

TO-204AA 2 TO-254AA 1 TO-3 1

11 hits Apply

O-MBFM-P2 7 S-XSFM-P3 1

11 hits Apply

e0 3

11 hits Apply

Manufacturer (8)

Defense Logistics Agency 2 Harris Semiconductor 1 Intersil Corporation 1 Microchip Technology Inc 2 Microsemi Corporation 2 New England Semiconductor 1 Silicon Transistor Corporation 1 Solitron Devices Inc 1

11 hits Apply

Number of Elements (1)

1 8

11 hits Apply

Number of Terminals (2)

2 7 3 1

11 hits Apply

200.0 °C 3

11 hits Apply

-65.0 °C 1

11 hits Apply

METAL 7 UNSPECIFIED 1

11 hits Apply

ROUND 7 SQUARE 1

11 hits Apply

FLANGE MOUNT 8

11 hits Apply

Active 5 Obsolete 4 Transferred 2

11 hits Apply

No 2

11 hits Apply

NOT SPECIFIED 1

11 hits Apply

Polarity/Channel Type (1)

NPN 8

11 hits Apply

125 W 1

11 hits Apply

125 W 2

11 hits Apply

Surface Mount (1)

NO 8

11 hits Apply

Transition Frequency-Nom (fT) (1)

5 MHz 2

11 hits Apply